Event Details

Recent Research Progress in New Semiconductor Material: Zinc Nitride

Presenter: Peng Wu
Supervisor:

Date: Thu, May 24, 2018
Time: 15:00:00 - 16:00:00
Place: EOW 430

ABSTRACT

Summary 

 

Zinc nitride films can be deposited by molecular beam epitaxy using a zinc source at substrate temperatures lower than 200 °C. This low deposition temperature makes the material compatible with flexible substrates. The as-grown layers present a black color, single structures, large conductivities, and high visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This talk reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film transistors, and sweat monitoring sensors.